? semiconductor components industries, llc, 2009 january, 2009 ? rev. 0 1 publication order number: mmbt4401m3/d MMBT4401M3T5G npn switching transistor the MMBT4401M3T5G device is a spin ? off of our popular sot ? 23 three ? leaded device. it is designed for general purpose switching applications and is housed in the sot ? 723 surface mount package. this device is ideal for low ? power surface mount applications where board space is at a premium. features ? reduces board space ? this is a halide ? free device ? this is a pb ? free device maximum ratings rating symbol value unit collector ? emitter voltage v ceo 40 vdc collector ? base voltage v cbo 60 vdc emitter ? base voltage v ebo 6.0 vdc collector current ? continuous i c 600 madc thermal characteristics characteristic symbol max unit total device dissipation fr ? 5 board (note 1) t a = 25 c derate above 25 c p d 265 2.1 mw mw/ c thermal resistance, junction ? to ? ambient r ja 470 c/w total device dissipation alumina substrate, (note 2) t a = 25 c derate above 25 c p d 640 5.1 mw mw/ c thermal resistance, junction ? to ? ambient r ja 195 c/w junction and storage temperature t j , t stg ? 55 to +150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. fr ? 5 = 1.0 0.75 0.062 in. 2. alumina = 0.4 0.3 0.024 in. 99.5% alumina. http://onsemi.com device package shipping ? ordering information MMBT4401M3T5G sot ? 723 (pb ? free) 8000/tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. sot ? 723 case 631aa style 1 1 2 3 af m af = specific device code m = date code marking diagram collector 3 1 base 2 emitter
MMBT4401M3T5G http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector ? emitter breakdown voltage (note 3) (i c = 1.0 madc, i b = 0) v (br)ceo 40 ? vdc collector ? base breakdown voltage (i c = 0.1 madc, i e = 0) v (br)cbo 60 ? vdc emitter ? base breakdown voltage (i e = 0.1 madc, i c = 0) v (br)ebo 6.0 ? vdc base cutoff current (v ce = 35 vdc, v eb = 0.4 vdc) i bev ? 0.1 adc collector cutoff current (v ce = 35 vdc, v eb = 0.4 vdc) i cex ? 0.1 adc on characteristics (note 3) dc current gain (i c = 0.1 madc, v ce = 1.0 vdc) (i c = 1.0 madc, v ce = 1.0 vdc) (i c = 10 madc, v ce = 1.0 vdc) (i c = 150 madc, v ce = 1.0 vdc) (i c = 500 madc, v ce = 2.0 vdc) h fe 20 40 80 100 40 ? ? ? 300 ? ? collector ? emitter saturation voltage (i c = 150 madc, i b = 15 madc) (i c = 500 madc, i b = 50 madc) v ce(sat) ? ? 0.4 0.75 vdc base ? emitter saturation voltage (i c = 150 madc, i b = 15 madc) (i c = 500 madc, i b = 50 madc) v be(sat) 0.75 ? 0.95 1.2 vdc small ? signal characteristics current ? gain ? bandwidth product (i c = 20 madc, v ce = 10 vdc, f = 100 mhz) f t 250 ? mhz collector ? base capacitance (v cb = 5.0 vdc, i e = 0, f = 1.0 mhz) c cb ? 6.5 pf emitter ? base capacitance (v eb = 0.5 vdc, i c = 0, f = 1.0 mhz) c eb ? 30 pf input impedance (i c = 1.0 madc, v ce = 10 vdc, f = 1.0 khz) h ie 1.0 15 k voltage feedback ratio (i c = 1.0 madc, v ce = 10 vdc, f = 1.0 khz) h re 0.1 8.0 x 10 ? 4 small ? signal current gain (i c = 1.0 madc, v ce = 10 vdc, f = 1.0 khz) h fe 40 500 ? output admittance (i c = 1.0 madc, v ce = 10 vdc, f = 1.0 khz) h oe 1.0 30 mhos switching characteristics delay time (v cc = 30 vdc, v eb = 2.0 vdc, i c = 150 madc, i b1 = 15 madc) t d ? 15 ns rise time t r ? 20 storage time (v cc = 30 vdc, i c = 150 madc, i b1 = i b2 = 15 madc) t s ? 225 ns fall time t f ? 30 3. pulse test: pulse width 300 s, duty cycle 2.0%. figure 1. turn ? on time figure 2. turn ? off time switching time equivalent test circuits scope rise time < 4.0 ns *total shunt capacitance of test jig connectors, and oscilloscope +16 v -2.0 v < 2.0 ns 0 1.0 to 100 s, duty cycle 2.0% 1.0 k +30 v 200 c s * < 10 pf +16 v -14 v 0 < 20 ns 1.0 to 100 s, duty cycle 2.0% 1.0 k +30 v 200 c s * < 10 pf -4.0 v
MMBT4401M3T5G http://onsemi.com 3 -55 c figure 3. dc current gain i c , collector current (a) figure 4. collector saturation region i b , base current (ma) 0.4 0.6 0.8 1.2 0.2 v , collector-emitter voltage (volts) 0 ce i c = 1.0 ma 0.001 10 ma 100 ma 500 ma 50 250 300 500 0.01 h , dc current gain 0.1 0 1 fe t j = 150 c 400 25 c v ce = 5.0 v v ce = 2.0 v v ce = 1.0 v figure 5. collector ? emitter saturation voltage vs. collector current i c , collector current (a) 0.15 0.20 0.30 0.35 0.05 figure 6. temperature coefficients i c , collector current (ma) vce(sat), collector-emitter saturation voltage (v) 0.01 0.1 0 -0.5 0 +0.5 -1.0 -1.5 -2.0 1 150 c vc for v ce(sat) vb for v be 0.0001 coefficient (mv/ c) -2.5 1.0 2.0 5.0 10 20 50 100 500 200 0.1 0.2 0.5 0.01 0.1 1.0 110 300 ma 100 150 200 350 450 -55 c 0.001 25 c 0.10 0.25 i c /i b = 10 100
MMBT4401M3T5G http://onsemi.com 4 figure 7. base ? emitter saturation voltage vs. collector current figure 8. base ? emitter turn on voltage vs. collector current i c , collector current (a) i c , collector current (a) 1 0.1 0.01 0.001 0.0001 0.3 0.4 0.5 0.6 0.7 0.9 1.0 1.1 1 0.1 0.01 0.001 0.0001 0.3 0.4 0.5 0.6 0.7 0.9 1.0 v be(sat) , base ? emitter saturation voltage (v) v be(on) , base ? emitter turn on voltage (v) 0.8 150 c 25 c ? 55 c 0.8 150 c 25 c ? 55 c i c /i b = 10 v ce = 2.0 v figure 9. input capacitance vs. emitter base voltage figure 10. output capacitance vs. collector base voltage v eb , emitter base voltage (v) v cb , collector base voltage (v) 6 3 2 1 0 9 11 13 15 19 21 50 30 25 10 0 1.5 2.5 3.5 4.5 6.5 8.5 c ibo , input capacitance (pf) c obo , output capacitance (pf) 17 5.5 45 51520 354045 7.5
MMBT4401M3T5G http://onsemi.com 5 package dimensions style 1: pin 1. base 2. emitter 3. collector sot ? 723 case 631aa ? 01 issue c dim min nom max millimeters a 0.45 0.50 0.55 b 0.15 0.21 0.27 b1 0.25 0.31 0.37 c 0.07 0.12 0.17 d 1.15 1.20 1.25 e 0.75 0.80 0.85 e 0.40 bsc h 1.15 1.20 1.25 l 0.15 0.20 0.25 0.018 0.020 0.022 0.0059 0.0083 0.0106 0.010 0.012 0.015 0.0028 0.0047 0.0067 0.045 0.047 0.049 0.03 0.032 0.034 0.016 bsc 0.045 0.047 0.049 0.0059 0.0079 0.0098 min nom max inches e notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeters. 3. maximum lead thickness includes lead finish. minimum lead thickness is the minimum thickness of base material. 4. dimensions d and e do not include mold flash, protrusions or gate burrs. d b1 e b e a l c h ? y ? ? x ? x 0.08 (0.0032) y 2x e 1 2 3 1.0 0.039 mm inches scale 20:1 0.40 0.0157 0.40 0.0157 0.40 0.0157 0.40 0.0157 0.40 0.0157 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. mmbt4401m3/d publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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